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issue 1.0 - march 2009 1 ? diodes incorporated www.diodes.com a product line o f diodes incorporated ZXMHC3F381N8 30v so8 complementary enhancem ent mode mosfet h-bridge summary device v (br)dss q g r ds(on) i d t a = 25 c n-ch 30v 9.0nc 33m ? @ v gs = 10v 5.0a 60m ? @ v gs = 4.5v 3.9a p-ch -30v 12.7nc 55m ? @ v gs = -10v -4.1a 80m ? @ v gs = -4.5v -3.3a description this new generation complementary mosfet h-bridge features low on-resistance achi evable with low gate drive. features ? 2 x n + 2 x p channels in a soic package ? low voltage (v gs = 4.5 v) gate drive applications ? dc motor control ? dc-ac inverters ordering information device reel size (inches) tape width (mm) quantity per reel ZXMHC3F381N8tc 13 12 2,500 device marking zxmhc 3f381 p1s/p2s n1s/n2s p1g p2g n2g n1g p1d/n1d p2d/n2d
ZXMHC3F381N8 issue 1.0 - march 2009 2 ? diodes incorporated www.diodes.com absolute maximum ratings parameter symbol n- channel p- channel unit drain-source voltage v dss 30 -30 v gate-source voltage v gs 20 20 v continuous drain current @ v gs = 10v; t a =25 c (b) @ v gs = 10v; t a =70 c (b) @ v gs = 10v; t a =25 c (a) @ v gs = 10v; t l =25 c (f) i d 4.98 3.98 3.98 4.17 -4.13 -3.31 -3.36 -3.51 a pulsed drain current @ v gs = 10v; t a =25 c (c) i dm 22.9 -19.6 a continuous source current (body diode) at t a =25 c (b) i s 2.0 -2.0 a pulsed source current (body diode) at t a =25 c (c) i sm 22.9 -19.6 a power dissipation at t a =25 c (a) linear derating factor p d 0.87 6.94 w mw/ c power dissipation at t a =25 c (b) linear derating factor p d 1.35 10.9 w mw/ c power dissipation at t l =25 c (f) linear derating factor p d 0.95 7.63 0.98 7.81 w mw/ c operating and storage temperature range t j , t stg -55 to 150 c thermal resistance parameter symbol value unit junction to ambient (a) r ja 144 c/w junction to ambient (b) r ja 92 c/w junction to ambient (d) r ja 106 c/w junction to ambient (e) r ja 254 c/w junction to lead (f) r jl 131 128 c/w notes: (a) for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state condition with one active die. (b) same as note (a), except the device is measured at t 10 sec. (c) same as note (a), except the device is pulsed with d= 0.02 and pulse width 300 s. the pulse current is limited by the maximum junction temperature. (d) for a device surface mounted on 50mm x 50mm x 1.6mm fr4 pcb with high coverage of single sided 2oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state condition with one active die. (e) for a device surface mounted on minimum copper 1.6mm fr4 pcb, in still air conditions; the device is measured when operating in a steady-state condition with one active die. (f) thermal resistance from junction to so lder-point (at the end of the drain lead); the device is operating in a steady-state condition with one active die.
ZXMHC3F381N8 issue 1.0 - march 2009 3 ? diodes incorporated www.diodes.com thermal characteristics 0.1 1 10 10m 100m 1 10 0 25 50 75 100 125 150 0.0 0.5 1.0 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 140 100 1m 10m 100m 1 10 100 1k 1 10 100 0.1 1 10 10m 100m 1 10 note (a) 100us 100ms 1s r ds(on) limited 1ms n-channel safe operating area single pulse, t amb =25c dc 10ms i d drain current (a) v ds drain-source voltage (v) any one active die derating curve max power dissipation (w) temperature (c) one active die 25 x 25mm 1oz d=0.2 d=0.5 d=0.1 transient thermal impedance single pulse d=0.05 thermal resistance (c/w) pulse width (s) one active die single pulse t amb =25c pulse power dissipation maximum power (w) pulse width (s) note (a) single pulse, t amb =25c 1s dc 100us 1ms 10ms 100ms r ds(on) limited p-channel safe operating area -v ds drain-source voltage (v) -i d drain current (a)
ZXMHC3F381N8 issue 1.0 - march 2009 4 ? diodes incorporated www.diodes.com n-channel electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss 30 v i d = 250 a, v gs = 0v zero gate voltage drain current i dss 0.5 a v ds = 30v, v gs = 0v gate-body leakage i gss 100 na v gs = 20v, v ds = 0v gate-source threshold voltage v gs(th) 1.0 3.0 v i d = 250 a, v ds = v gs static drain-source on-state resistance (a) r ds(on) 0.033 0.060 ? v gs = 10v, i d = 5a v gs = 4.5v, i d = 4a forward transconductance (a) (c) g fs 11.8 s v ds = 15v, i d = 5a dynamic capacitance (c) input capacitance c iss 430 pf v ds = 15v, v gs = 0v f= 1mhz output capacitance c oss 101 pf reverse transfer capacitance c rss 56 pf switching (b) (c) turn-on-delay time t d ( on ) 2.5 ns v dd = 15v, v gs = 10v i d = 1a r g ? 6 , rise time t r 3.3 ns turn-off delay time t d(off) 11.5 ns fall time t f 6.3 ns gate charge (c) total gate charge q g 9.0 nc v ds =15v, v gs = 10v i d = 5a gate-source charge q gs 1.7 nc gate-drain charge q gd 2.0 nc source?drain diode diode forward voltage (a) v sd 0.82 1.2 v i s = 1.7a, v gs = 0v reverse recovery time (c) t rr 12 ns i s = 2.1a, di/dt= 100a/ s reverse recovery charge (c) q rr 4.9 nc notes: (a) measured under pulsed conditions. pulse width 300 s; duty cycle 2%. (b) switching characteristics are independent of operating junction temperature. (c) for design aid only, not subject to production testing
ZXMHC3F381N8 issue 1.0 - march 2009 5 ? diodes incorporated www.diodes.com n-channel typical characteristics 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 234 0.01 0.1 1 10 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 0.01 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1e-3 0.01 0.1 1 10 4v 4.5v 10v 3.5v 2.5v output characteristics t = 25c 3v v gs i d drain current (a) v ds drain-source voltage (v) 10v 4.5v 2v 2.5v 4v 3.5v 3v output characteristics t = 150c v gs i d drain current (a) v ds drain-source voltage (v) typical transfer characteristics v ds = 10v t = 25c t = 150c i d drain current (a) v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = 10v i d = 5a v gs( th) v gs = v ds i d = 250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 10v 3.5v 4v 3v on-resistance v drain current t = 25c 2.5v 4.5v v gs r ds(on) drain-source on-resistance ( ) i d drain current (a) t = 150c t = 25c source-drain diode forward voltage v sd source-drain voltage (v) i sd reverse drain current (a)
ZXMHC3F381N8 issue 1.0 - march 2009 6 ? diodes incorporated www.diodes.com n-channel typical characteristics ?continued 11 0 0 100 200 300 400 500 600 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) v ds - drain - source voltage (v) 0123456789 0 1 2 3 4 5 6 7 8 9 10 i d = 5a v ds = 15v gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) v gs gate-source voltage (v) test circuits current regulator charge gate charge test circuit switching time test circuit basic gate charge waveform switching time waveforms d.u.t 50k 12v same as d.u.t v gs v gs v ds v g q gs q gd q g v gs 90% 10% t (on) t (on) t d(on) t r t r t d(off) v ds dd v r d r g v ds i d i g
ZXMHC3F381N8 issue 1.0 - march 2009 7 ? diodes incorporated www.diodes.com p-channel electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss -30 v i d = -250 a, v gs = 0v zero gate voltage drain current i dss -0.5 a v ds = -30v, v gs = 0v gate-body leakage i gss 100 na v gs = 20v, v ds = 0v gate-source threshold voltage v gs(th) -1.0 -3.0 v i d = -250 a, v ds = v gs static drain-source on-state resistance (a) r ds(on) 0.055 0.080 ? v gs = -10v, i d = -5a v gs = -4.5v, i d = -4a forward transconductance (a) (c) g fs 14 s v ds = -15v, i d = -5a dynamic capacitance (c) input capacitance c iss 670 pf v ds = -15v, v gs = 0v f= 1mhz output capacitance c oss 126 pf reverse transfer capacitance c rss 70 pf switching (b) (c) turn-on-delay time t d ( on ) 1.9 ns v dd = -15v, v gs = -10v i d = -1a r g ? 6 rise time t r 3.0 ns turn-off delay time t d(off) 30 ns fall time t f 21 ns gate charge (c) total gate charge q g 12.7 nc v ds = -15v, v gs = -10v i d = -5a gate-source charge q gs 2.0 nc gate-drain charge q gd 2.4 nc source?drain diode diode forward voltage (a) v sd -0.82 -1.2 v i s = -1.7a, v gs = 0v reverse recovery time (c) t rr 16.5 ns i s = -2.1a, di/dt= 100a/ s reverse recovery charge (c) q rr 11.5 nc notes: (a) measured under pulsed conditions. pulse width 300 s; duty cycle 2%. (b) switching characteristics are independent of operating junction temperature. (c) for design aid only, not subject to production testing
ZXMHC3F381N8 issue 1.0 - march 2009 8 ? diodes incorporated www.diodes.com p-channel typical characteristics 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.1 1 10 2.0 2.5 3.0 3.5 0.1 1 10 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.0 1e-3 0.01 0.1 1 10 4.5v 2.5v 10v 3.5v 4v output characteristics t = 25c 3v v gs -i d drain current (a) -v ds drain-source voltage (v) 4v 10v 2.5v 2v 3.5v 3v output characteristics t = 150c v gs -i d drain current (a) -v ds drain-source voltage (v) typical transfer characteristics v ds = 10v t = 25c t = 150c -i d drain current (a) -v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = 10v i d = 5a v gs( th) v gs = v ds i d = 250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 4.5v 2.5v 10v 3.5v 4v 3v on-resistance v drain current t = 25c v gs r ds(on) drain-source on-resistance ( ) -i d drain current (a) vgs = 0v t = 150c t = 25c source-drain diode forward voltage -v sd source-drain voltage (v) -i sd reverse drain current (a)
ZXMHC3F381N8 issue 1.0 - march 2009 9 ? diodes incorporated www.diodes.com p-channel typical characteristics ?continued 11 0 0 200 400 600 800 1000 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) -v ds - drain - source voltage (v) 051 01 5 0 1 2 3 4 5 6 7 8 9 10 i d = 5a v ds = 15v gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) -v gs gate-source voltage (v) test circuits c urrent regulator charge gate charge test circuit switchin g time test circuit basic gate charge waveform switchin g time waveforms d.u.t 50k 0.2f 12v same as d.u.t v gs v gs v ds v g q gs q gd q g v gs 90% 10% t (on) t (on) t d(on) t r t r t d(off) v ds v dd r d r g pulse width 1s duty factor 0.1% v ds i d i g
ZXMHC3F381N8 issue 1.0 - march 2009 10 ? diodes incorporated www.diodes.com packaging details - so8 dim inches millimeters dim inches millimeters min. max. min. max. min. max. min. max. a 0.053 0.069 1.35 1.75 e 0.050 bsc 1.27 bsc a1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 d 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 h 0.228 0.244 5.80 6.20 0 8 0 8 e 0.150 0.157 3.80 4.00 - - - - - l 0.016 0.050 0.40 1.27 - - - - - note: controlling dimensions are in inches. approximate dimensions are provided in millimeters
ZXMHC3F381N8 issue 1.0 - march 2009 11 ? diodes incorporated www.diodes.com important notice diodes incorporated makes no warranty of any ki nd, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries re serve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any pr oduct described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product descri bed herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in su ch applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are repr esented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its represent atives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more un ited states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief exec utive officer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expe cted to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life s upport device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory rami fications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and an y use of diodes incorporated products in such safety-critical, life support device s or systems, notwithstanding any devices- or systems-relat ed information or support that may be provided by diodes incorporated. further, customers must fully indemnify di odes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety-critical, life support devices or systems. copyright ? 2009, diodes incorporated www.diodes.com

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